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Piezoresistive transduction in multilayer polycrystalline silicon resonators

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8 Author(s)
Cross, J.D. ; Cornell University, Ithaca, New York 14853, USA ; Ilic, B.R. ; Zalalutdinov, M.K. ; Zhou, W.
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We demonstrate piezoresistive transduction of mechanical motion from out-of-plane flexural micromechanical resonators made from stacked thin films. The resonators are fabricated from two highly doped polycrystalline silicon layers separated by an interlayer dielectric. We examine two interlayer materials: thermal silicon dioxide and stoichiometric silicon nitride. We show that via one-time dielectric breakdown, the film stack functions as a vertical piezoresistor effectively transducing the motion of the resonators. We obtain a gauge factor of ∼5, which is sufficient to detect the resonator motion. The simple film stack constitutes a vertically oriented piezoresistor that is readily integrated with micro- and nanoscale resonators.

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Applied Physics Letters  (Volume:95 ,  Issue: 13 )