Referenced Items are not available for this document.
Current transport and electroluminescence mechanisms in thin
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We have studied the current transport and electroluminescence properties of metal oxide semiconductor (MOS) devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole–Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler–Nordheim tunneling. The results suggest that the electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an electroluminescence power efficiency above
Published in:
Journal of Applied Physics
(Volume:106
,
Issue:
6
)
Date of Publication: Sep 2009
- Page(s):
- 063526 - 063526-6
- ISSN :
- 0021-8979
- Digital Object Identifier :
- 10.1063/1.3213386
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 October 2009
- Issue Date :
- Sep 2009
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