Cart (Loading....) | Create Account
Close category search window

Diagnostics and modeling of CH4CO2 plasmas for nanosmooth diamond deposition: Comparison to experimental data

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Gries, T. ; CNRS-UPR 3021, Institut de Combustion, Aérothermique, Réactivité et Environnement, 45071 Orléans Cedex 2, France ; Vandenbulcke, L. ; de Persis, S. ; Aubry, O.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Microwave plasma-assisted chemical vapor deposition of very smooth diamond coatings is an important process for various applications including mechanical and micromechanical systems and acoustic wave devices. Nanosmooth coatings have been deposited from CH4CO2 gas mixtures at moderate temperature, the order of 600 °C. In order to increase the knowledge of the process and the control of the final characteristics of the films, a modeling of these plasmas is necessary. This has been carried out here from the prior determination of the plasma parameters. Optical emission spectroscopy was used in order to determine the gas kinetic temperature. Microwave interferometry and Langmuir double probe were used to determine the electron density and the electron temperature, respectively. All these experimental data have been obtained for a wide range of external parameters, such as the inlet composition, the pressure, the gas flow rate, and the power injected in the plasma. Then modeling of CH4CO2 plasmas was developed by coupling chemical kinetics with a two-dimensional description of hydrodynamics and a surface-wall recombination of main radicals. The kinetic description of the CH4CO2 plasmas was done by combining a specific mechanism of dissociation by electrons to a slightly modified version of a combustion mechanism for neutral-neutral interactions. This model has been validated by comparing the calculated species concentrations and the experimental results obtained by molecular beam mass spectrometry as a function of various external parameters. The influence of the inlet composition at three microwave power densities has been especially emphasized here. The calculations are in good agreeme- nt with the experimental results. It is shown that among the various parameters that influence the diamond growth from CH4CO2 plasmas, the power density injected in the plasma is very important as it changes strongly the degree of completion of the chemical system and then the deposition conditions.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 5 )

Date of Publication:

Sep 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.