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A 56MΩ CMOS TIA for MEMS applications

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4 Author(s)
Salvia, J. ; Electr. Eng. Dept., Stanford Univ., Stanford, CA, USA ; Lajevardi, P. ; Hekmat, M. ; Murmann, B.

We present the analysis, design, and measurement results of a high-gain, low-noise differential transimpedance amplifier (TIA) designed to interface with electrostatic microelectromechanical systems (MEMS) resonators. A capacitive-feedback current amplifier drives current into an active load to obtain a 56 MOmega transimpedance gain, 1.8 MHz bandwidth, phase response near 0deg, and 65 fA/radicHz input-referred noise. The TIA was fabricated in 0.18 mum CMOS technology and dissipates 436 muW from a 1.8 V supply.

Published in:

Custom Integrated Circuits Conference, 2009. CICC '09. IEEE

Date of Conference:

13-16 Sept. 2009