By Topic

Radiation Induced Change in Defect Density in {\hbox {HfO}}_{2} -Based MIM Capacitors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Bing Miao ; Sch. of Electr., Electron. & Comput. Eng., Newcastle Univ., UK ; Rajat Mahapatra ; Richard Jenkins ; Jon Silvie
more authors

The effect of radiation-introduced defects on the behaviour of HfO2-based metal-insulator-metal (MIM) capacitors as a function of gamma-ray radiation dose from 10 to 1000 krad are reported. Half the capacitors studied showed no degradation after exposure to 1000 krad from a 60Co source, whilst the remaining half showed no change to parameters, such as barrier height and dielectric constant. For the good devices, the I-V characteristics are controlled by Poole-Frenkel model, at a corresponding interface trap energy of 0.39 ~ 0.46 eV before radiation and 0.37 ~ 0.44 eV after 1000 krad. The failed devices show an substantial increase in the trap density from the as fabricated level of 1019 cm-3 to in excess of 1020 cm-3, in contrast to the good devices which show almost no change. We relate this change in defect density to the failure of devices by means of a percolation model, with a trap separation of around 2 nm.

Published in:

IEEE Transactions on Nuclear Science  (Volume:56 ,  Issue: 5 )