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Si/SiGe Resonant Interband Tunneling Diodes Incorporating \delta -Doping Layers Grown by Chemical Vapor Deposition

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7 Author(s)
Si-Young Park ; Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA ; Anisha, R. ; Berger, Paul R. ; Loo, R.
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This is the first report of a Si/SiGe resonant interband tunneling diodes (RITDs) on silicon substrates grown by the chemical vapor deposition process. The nominal RITD structure forms two quantum wells created by sharp delta-doping planes which provide for a resonant tunneling condition through the intrinsic spacer. The vapor phase doping technique was used to achieve abrupt degenerate doping profiles at higher substrate temperatures than previous reports using low-temperature molecular beam epitaxy, and postgrowth annealing experiments are suggestive that fewer point defects are incorporated, as a result. The as-grown RITD samples without postgrowth thermal annealing show negative differential resistance with a recorded peak-to-valley current ratio up to 1.85 with a corresponding peak current density of 0.1 kA/cm2 at room temperature.

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Electron Device Letters, IEEE  (Volume:30 ,  Issue: 11 )