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Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

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2 Author(s)
Poli, S. ; Adv. Res. Center on Electron. Syst., Univ. of Bologna, Bologna, Italy ; Pala, M.G.

We investigate the role of two main scattering mechanisms responsible for mobility degradation in ultrashort electron devices like silicon-nanowire FETs. We consider electron-phonon interaction and surface roughness (SR) at the Si/SiO2 interface as sources of inelastic and elastic scatterings. We address a full-quantum treatment within the nonequilibrium Green's function formalism, which allows us to take quantum confinement, quantum-phase interference, out of equilibrium, and quasi-ballistic transport into account. Our results show that both phonon- and SR-limited mobilities strongly depend on the channel length due to the importance of nonuniform scattering in ultrashort devices and contribute to understand the strong mobility reduction of decananometric devices.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 11 )

Date of Publication:

Nov. 2009

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