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\hbox {In}_{0.53}\hbox {Ga}_{0.47}\hbox {As} Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

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16 Author(s)
Singisetti, U. ; Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA ; Wistey, Mark A. ; Burek, G.J. ; Baraskar, A.K.
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Abstract-We report Al2O3Zln0.53Ga0.47As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n+ regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm In0.53Ga0.47As channel with an In0.4sAl0.52As back confinement layer and the n++ source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed ID = 0.95 mA/mum current density at VGS = 4.0 V and gm = 0.45 mS/mum peak transconductance at VDS = 2.0 V.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 11 )

Date of Publication:

Nov. 2009

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