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Band-Edge High-Performance Metal-Gate/High- \kappa nMOSFET Using \hbox {Hf}{-}\hbox {Si}/\hbox {HfO}_{2} Stack

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8 Author(s)
Takashi Ando ; Dept. of Mater. & Life Sci., Osaka Univ., Suita, Japan ; Tomoyuki Hirano ; Kaori Tai ; Shinpei Yamaguchi
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A record high electron mobility (248 cm2/V middots at E eff of 1 MV/cm) was obtained at T inv of 1.47 nm, with a band-edge effective work function, by a Hf-Si/HfO2 stack using gate-last process, resulting in I ON of 1178 muA/mum (I OFF of 100 nA/ mum ) at V dd of 1.0 V for a 45-nm gate nMOSFET without strain-enhanced technology.

Published in:

IEEE Transactions on Electron Devices  (Volume:56 ,  Issue: 12 )