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Dynamic characterization of high voltage power MOSFETs for behavior simulation models

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5 Author(s)
Hoch, V. ; Tech. Univ. Ilmenau, Ilmenau, Germany ; Petzoldt, J. ; Schlogl, A. ; Jacobs, H.
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This paper describes the determination of interelectrode capacitances of a fast switching high voltage super junction transistor from dynamic measurements in a commutation circuit with a SiC Schottky diode. The gained capacitance voltage characteristics reflect the transistor's effective parasitic capacitances during switching for the given application. Thus, these characteristics are used for the transistor's parameterization within a buck converter simulation model. The resulting switching simulation characteristics of the transistor correspond virtually with the appendant dynamic measurements.

Published in:

Power Electronics and Applications, 2009. EPE '09. 13th European Conference on

Date of Conference:

8-10 Sept. 2009