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This paper describes the determination of interelectrode capacitances of a fast switching high voltage super junction transistor from dynamic measurements in a commutation circuit with a SiC Schottky diode. The gained capacitance voltage characteristics reflect the transistor's effective parasitic capacitances during switching for the given application. Thus, these characteristics are used for the transistor's parameterization within a buck converter simulation model. The resulting switching simulation characteristics of the transistor correspond virtually with the appendant dynamic measurements.
Published in:
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Date of Conference: 8-10 Sept. 2009
- Page(s):
- 1 - 10
- E-ISBN :
- 978-90-75815-13-9
- Print ISBN:
- 978-1-4244-4432-8
- INSPEC Accession Number:
- 10939479
- Conference Location :
- Barcelona
- Product Type:
- Conference Publications
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