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Obvious suppression of performance degradation induced by thermal effect in SOI power LDMOSFETs using accumulation mode device structure

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3 Author(s)
Weitao Cheng ; Tohoku University, Aza-Aoba 6-6-10, Aramaki, Aoba-Ku, Sendai, Japan ; Akinobu Teramoto ; Tadahiro Ohmi

In this paper, we demonstrate that the advantages of obvious improvement o f the mobility and current drivability at high temperatures and the greatly suppressed self-heating effects in accumulation mode SOI power LDMOSFETs. We reveal the mechanisms of these advantages are resulted from the bulk current and accumulation mode device structure and propose that the accumulation mode device structure is very useful to realize high performance SOI power LDMOSFETs.

Published in:

Power Electronics and Applications, 2009. EPE '09. 13th European Conference on

Date of Conference:

8-10 Sept. 2009