Referenced Items are not available for this document.
In this paper, we demonstrate that the advantages of obvious improvement o f the mobility and current drivability at high temperatures and the greatly suppressed self-heating effects in accumulation mode SOI power LDMOSFETs. We reveal the mechanisms of these advantages are resulted from the bulk current and accumulation mode device structure and propose that the accumulation mode device structure is very useful to realize high performance SOI power LDMOSFETs.
Published in:
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Date of Conference: 8-10 Sept. 2009
- Page(s):
- 1 - 8
- E-ISBN :
- 978-90-75815-13-9
- Print ISBN:
- 978-1-4244-4432-8
- INSPEC Accession Number:
- 10939474
- Conference Location :
- Barcelona
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
