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3-level IGBT modules with trench gate IGBT and their thermal analysis in UPS, PFC and PV operation modes

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2 Author(s)
Honsberg, M. ; Mitsubishi Electr. Eur., Ratingen, Germany ; Radke, T.

Utilizing 3-level topology for less than 800 V of DC-link voltage where ldquostandardrdquo 2- level 1200 V Vces - class IGBT modules would be sufficient basically is a result of an inherent advantage of switching loss versus DC-loss of 3-level topology. The control of the semiconductors in a 3-level NPC topology employs a set of totally 12 control signals which are generated by muC or DSP or FPGA. A back to back 2-level / 3-level inverter has been built to circulate power performing arbitrary load conditions to analyze the thermal dissipation of the semiconductors. This thermal analysis utilizes an IR camera o perform an in situ measurement and allows precise modeling of thermal and electrical parameter. Once this experimental platform has been calibrated, the loss on each semiconductor chip can acquired and compared with the simulated result. Hence, tuning of the model parameter becomes possible. Besides the thermal investigation the approach of using IGBT module having specifically integrated real time current controller (RTC) and their contribution to turn off short circuit (SC) situations safely by forcing to keep the SC turn off sequence of the 3-level NPC leg.

Published in:

Power Electronics and Applications, 2009. EPE '09. 13th European Conference on

Date of Conference:

8-10 Sept. 2009