Applying the calibration comparison technique for verification of transmission line standards on silicon up to 110 GHz

This paper will present the results of extracting the electrical characteristics of planar lines using the calibration comparison method for standards realized in IBM's advanced 0.13 mum CMOS process. For the first time, this method is applied to characterizing the customized standards on silicon up to 110 GHz. Additionally, this paper considers the influences of the reference benchmark calibration standards, included with GaAs reference material RM8130, on the characterization accuracy of silicon wafer-embedded lines at mm-wave frequencies.