By Topic

High efficiency CMOS power amplifier for 3 to 5 GHz ultra-wideband (UWB) application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Sew-Kin Wong ; Fac. of Eng., Multimedia Univ., Cyberjaya, Malaysia ; Maisurah, S. ; Osman, M.N. ; Kung, F.
more authors

A two-stage 0.18 mum CMOS power amplifier (PA) for ultra-wideband (UWB) 3 to 5 GHz using common source inductive degeneration is presented in this paper. Onwafer measurement shows an average power gain of 15.2 dB with gain flatness of 0.6 dB and an input 1 dB compression (P1dB) above - 6.1 dBm from 3 to 5 GHz while consuming 25 mW from a 1.8 V supply. Load-pull measurement also shows a power added efficiency (PAE) of 34% at 4 GHz with 50 Omega load impedance. Results obtained in this work could be used as a reference design for immediate PA implementation in commercial mobile or portable UWB transmitter or signal generator.

Published in:

Consumer Electronics, IEEE Transactions on  (Volume:55 ,  Issue: 3 )