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Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors

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7 Author(s)
Shyh-Chiang Shen ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Yi-Che Lee ; Hee-Jin Kim ; Yun Zhang
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We report a study on the surface-leakage current in GaN/InGaN double heterojunction bipolar transistors (DHBTs) that are grown on a sapphire substrate. Surface-leakage-current densities on an unpassivated DHBT are 9.6 times 10-5 - 5.8 times 10-4 A/cm for JC = 0.5-50 A/cm2. A fabricated n-p-n GaN/InGaN DHBT shows the common-emitter dc current gain of 42, the collector-current density of 5.2 kA/cm2, and the common-emitter breakdown voltage (BVCEO) of 75 V.

Published in:

IEEE Electron Device Letters  (Volume:30 ,  Issue: 11 )