Referenced Items are not available for this document.
We report a study on the surface-leakage current in GaN/InGaN double heterojunction bipolar transistors (DHBTs) that are grown on a sapphire substrate. Surface-leakage-current densities on an unpassivated DHBT are 9.6 times 10-5 - 5.8 times 10-4 A/cm for JC = 0.5-50 A/cm2. A fabricated n-p-n GaN/InGaN DHBT shows the common-emitter dc current gain of 42, the collector-current density of 5.2 kA/cm2, and the common-emitter breakdown voltage (BVCEO) of 75 V.
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
11
)
Date of Publication: Nov. 2009
- Page(s):
- 1119 - 1121
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10930838
- Digital Object Identifier :
- 10.1109/LED.2009.2030373
- Product Type:
- Journals & Magazines
- Date of Publication :
- 02 October 2009
- Date of Current Version :
- 23 October 2009
- Issue Date :
- Nov. 2009
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
