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Through-Silicon via Interconnection for 3D Integration Using Room-Temperature Bonding

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11 Author(s)
Naotaka Tanaka ; Mech. Eng. Res. Lab., Hitachi Ltd., Hitachinaka, Japan ; Yasuhiro Yoshimura ; Michihiro Kawashita ; Toshihide Uematsu
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One approach to 3D technology is chip stacking using through-silicon vias (TSVs). Interconnects in a 3D assembly are potentially much shorter than in a 2D configuration, allowing for faster system speed and lower power consumption. However, it is extremely important to use cost-effective process technologies in practical use. Therefore, in our study, we propose a basic concept for interconnecting stacked chips with TSVs using a cost-effective process technology. The principal feature is to use a ldquomechanical-caulkingrdquo technique, which has been used widely in the mechanical-engineering field, enabling 3D interconnections between stacked chips. This makes it possible to interconnect them by only applying compressive force at room temperature. This paper presents the results obtained by using mechanical-caulking connections at room temperature accomplished by manufacturing a prototype of a chip-stacked package with TSV interconnections. A 3D-SiP composed of an existing MCU, an interposer, and an SDRAM chip with TSV interconnections was also manufactured. However, a customized design, assuming TSV interconnections in the existing MCU, needs to be introduced for practical use to achieve SiO2 etching with shorter turn around time (TATs) and high TSV yields of more than 99%.

Published in:

IEEE Transactions on Advanced Packaging  (Volume:32 ,  Issue: 4 )