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Behavior of temperature inside PN junction during microplasma switching

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4 Author(s)
Raska, M. ; Dept. of Phys., BUT, Brno, Czech Republic ; Andreev, A. ; Holcman, V. ; Koktavy, P.

The contribution is focused on determination of a temperature inside PN junction defect regions. These defect regions are called microplasmas. The microplasma is specified like region with a lower strong-field avalanche ionization breakdown voltage than other homogenous PN junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junction at certain voltage. These local avalanche breakdowns may exhibit like a current impulse noise. These impulses are usually represented by constant amplitude, random pulse width and random pulse origin time points. During the measurement of the microplasma noise was observed a relation between two-states current impulse noise and a temperature of a PN junction defect region. The main goal of this article is a determination of temperature behavior inside the microplasma region depends on a current impulse noise time behavior.

Published in:

Electronics Technology, 2008. ISSE '08. 31st International Spring Seminar on

Date of Conference:

7-11 May 2008