By Topic

Implementation of 60V tolerant dual direction ESD protection in 5V BiCMOS process for automotive application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Vashchenko, V.A. ; Nat. Semicond. Corp., Santa Clara, CA, USA ; Kindt, W. ; Ter Beek, M. ; Hopper, P.

A dual-direction ESD protection approach is applied to the problem of 60 V tolerant on-chip protection of the thin film resistors in automotive application circuits realized in 5 V BiCMOS process. A novel method for increasing the breakdown voltage of a blocked N-isolation layer is proposed and validated using process and device numerical simulation followed by experimental measurements.

Published in:

Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.

Date of Conference:

19-23 Sept. 2004