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Tapered Diode Laser With Reverse Bias Absorber Section

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5 Author(s)
Fiebig, C. ; Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany ; Feise, D. ; Eppich, B. ; Paschke, K.
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We present experimental results about gain-guided tapered diode laser having reverse bias absorber sections beside the ridge-waveguide. Due to these sections, we can avoid the propagation of unwanted modes outside the cavity. Therefore, the beam quality factor at about 6.5 W can be reduced from M sigma 2=8 down to M sigma 2=5 . Furthermore, the laser shows a more stable spectral behavior at high output power levels.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 23 )