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High-Frequency Measurements on InAs Nanowire Field-Effect Transistors Using Coplanar Waveguide Contacts

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8 Author(s)
Blekker, K. ; Solid-State Electron. Dept., Univ. Duisburg-Essen, Duisburg, Germany ; Munstermann, B. ; Matiss, A. ; Do, Q.T.
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In this paper, a 50-μm-pitch coplanar waveguide pattern for on-wafer high-frequency measurements on nanowire FET is used. The contact structure exhibits relatively large parasitic elements in comparison to the intrinsic device making a precise deembedding both necessary and challenging. A single InAs nanowire FET with a large gate length of 1.4 μm possesses after deembedding a maximum stable gain higher than 30 dB and a maximum oscillation frequency of 15 GHz. The gate length scaling of the nanowire transistor is modeled using the experimental transconductance data of a set of transistors and an analytical model. On this basis, both the device performance and the expectation of high-frequency measurements at small gate lengths are discussed.

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Nanotechnology, IEEE Transactions on  (Volume:9 ,  Issue: 4 )