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Relationship Between Current Transport and Electroluminescence in \hbox {Si}^{+} -Implanted  \hbox {SiO}_{2} Thin Films

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8 Author(s)
Liang Ding ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Chen, T.P. ; Ming Yang ; Jen It Wong
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Relationship between current transport and electroluminescence (EL) in the system of excess Si distributed in SiO2 thin films synthesized with low-energy ion implantation has been examined. A linear relationship is found, and both of them follow a power law and are determined by the concentration and distribution of the excess Si in the oxide films. With the knowledge of the dependence of the transport on the concentration and distribution of the excess Si, one can predict the effect of the implantation recipe on the EL intensity.

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Electron Devices, IEEE Transactions on  (Volume:56 ,  Issue: 11 )