Skip to Main Content
A photon-counting mode X-ray imaging device has a lot of interests, such as high-sensitivity and energy-discrimination. We have studied about photon-counting mode X-ray image sensor which was constructed with CdTe, and already developed for the line sensor. The imaging device that could detect X-rays by using Field Emitter Array (FEA) was proposed. The resolution of the image is decided by the spot size of the electron beam. In this report, Vertical Thin Film Field Emitter Array (VTF-FEA) was fabricated by using an Ion Induced Bending (PiB) process. And we have constructed an imaging device with VTF-FEA and the CdTe detector. And the principle inspection was performed.