By Topic

Improved field emission properties of CdSe deposited single-walled carbon nanotubes emitter

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Taehee Park ; Dept. of Chem., Hanyang Univ., Seoul, South Korea ; Jungwoo Lee ; Lee, Wonjoo ; Juwon Ahn
more authors

The field emission (FE) properties of single-walled carbon nanotubes (SWNTs) are of great importance, especially in applications involving flat panel display devices such as field emission displays (FED). The electron emitters of the FED must be long-lived and stable, and possess a low turn-on threshold voltage and a high current density at a given external field. In general, the emission source should have highly oriented and well-distributed tubes in order to utilize the characteristics of the nanotubes for FE. A notable method using plasma for the synthesis of the aligned CNTs was developed by Ren et al. We report the modified field emitter of CdS quantum-dot deposited on SWNTs (DcS/SWNTs). As a II-VI semiconductor compound, CdS has attracted considerable interest in optoelectronic application because of its relatively low electron affinity, high chemical inertness and sputter resistance.

Published in:

Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International

Date of Conference:

20-24 July 2009