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Low work function nanometer-order controlled transfer mold field emitter arrays

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3 Author(s)
Masayuki Nakamoto ; Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan ; Jonghyun Moon ; Koji Shiratori

Extremely sharp and uniform Transfer Metal Mold FEAs with thin film low work function and environment-hard emitter material such as TiN and Au have been fabricated by controlling the thickness of the coated emitter material to realize high efficient, high reliable, low-cost vacuum nanoelectronic devices, and especially aerospace nanodevices for electric propulsion engines [1, 2]. Their nanometer order tip radii from 2.5 to 52.5 nm can be controlled by changing the thickness of emitter materials. Turn-on electric fields of the AuFEAs from 31.8 to 68.1 V/mum (Emitter/anode distance: less than 30 mum) have been intentionally controlled by changing tip radii. Turn-on field of TiN-FEAs resulted in the low electric field values of 21.7 V/mum.

Published in:

2009 22nd International Vacuum Nanoelectronics Conference

Date of Conference:

20-24 July 2009