By Topic

Electron-wave interference induced by electrons emitted from Pt field emitter fabricated by focused-ion-beam-induced deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
K. Murakami ; Center for Quantum Science and Technology under Extreme Conditions and Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan ; T. Matsuo ; F. Wakaya ; M. Takai

The development of a coherent-field emitter for electron-wave interferences and its possible application have been investigated in our research. So far, electron-wave interferences induced by electrons emitted from a Pt field emitter fabricated by electron-beam-induced deposition (EBID) were reported. However, the field emission properties and electron-emission patterns of Pt field emitters fabricated by focused-ion beam (FIB)-induced deposition (FIBID) have not been characterized. The resistivity of a Pt nanowire fabricated by EBID was quite high and decreases by three to four orders of magnitude after annealing at 400deg C. On the other hand, the resistivity of Pt nanowire deposited by FIB was very low even without annealing. The Pt field emitter fabricated by FIBID might be, therefore, more suited to the coherent-field emitter. In this study, the characteristics of Pt field emitters fabricated by FIBID and their electron-emission patterns of electron-wave interference were investigated.

Published in:

2009 22nd International Vacuum Nanoelectronics Conference

Date of Conference:

20-24 July 2009