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Cooling effects of field emission from N-type semiconductors

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5 Author(s)
Chung, M.S. ; Dept. of Phys., Univ. of Ulsan, Ulsan, South Korea ; Mayer, A. ; Weis, B.L. ; Miskovsky, N.M.
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In this work, we investigate the cooling effect of field emission from Si and GaN semiconductors. The cooling is made by the energy exchange (i.e. the energy loss of the cathode) Deltaepsiv which is defined the average energies of field and replacement electrons. The calculations of Deltaepsiv are obtained analytically and numerically using the WKB approximation.

Published in:

Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International

Date of Conference:

20-24 July 2009