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In this paper, the fabrication of a planar gate field emission display (FED) is studied. In this structure, the carbon nanotubes (CNTs) are confined by insulated layer which helps to reduce the possibility of shorting between CNTs and gate electrodes. Transmission electron microscopy (TEM) is used to study the structure of the CNTs. The cathode current vs. gate voltage characteristics of the fabricated vacuum-scaled planar gate CNT-FED were measured.