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The temperature dependence of the low-frequency characteristics of junction field-effect transistors

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2 Author(s)

A discussion is given of the factors determining the temperature dependence of the low-frequency junction field-effect transistor characteristic. The results of measurements of the temperature coefficient of the pinch-off voltage and the channel mobility for a number of 2N3819 and 2N3820 transistors are presented and these are seen to be in disagreement with values that have been assumed previously. The theoretical and practical considerations in obtaining a zero temperature coefficient are discussed in some detail.

Published in:

Radio and Electronic Engineer  (Volume:47 ,  Issue: 6 )