By Topic

Linear microwave amplification using impatt diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

Impatt diode amplifiers are candidates for use in super high frequency (s.h.f.) systems as broadband,intermediate power amplifiers, but their poor linearity makes them unattractive for some systems.The linearity of some X¿band impatt diode amplifiers is considered in this paper. The amplifiers are of the circulator coupled, reflexion type, where p +nn + silicon diodes of various doping levels are operated in the impatt mode.The impatt class of diodes shows a r.f.negative resistance that depends on the r.f. voltage, so that the design of linear amplifiers using passive circuitry is empirical. The structure of the diode chip determines the spatial distribution of the electric field which, in turn, determines the value of the negative resistanceand its dependence on r.f. power. A range of theoretical? W mesa structures has been investigated to get a computed, optimum, linear amplifier at a frequency of 12 GHz, where the optimizingparameter is the choice of passive stepped impedance transformer. The computations show that somewhat better linearity can be obtained with lower-doped diodes than with the higher¿doped diodes used in the design of impatt oscillators. The characteristics of experimental amplifiers using relatively highly¿doped diodes are presented and show good qualitative agreement with the computed responses.

Published in:

Radio and Electronic Engineer  (Volume:43 ,  Issue: 10 )