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New ESD protection circuits based on PNP triggering SCR for advanced CMOS device applications

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1 Author(s)
Yasuyuki Morishita ; System ULSI Development Division, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229-1134, Japan

New silicon controlled rectifier (SCR) structures for ESD protection circuits, with low parasitic capacitance, are proposed. These new SCR structures are triggered by parasitic PNP (not NPN) transistor, with which the anode-cathode spacing (LSCR), the triggering voltage (VTRIG), the holding voltage (VHOLD), and the on-resistance (RON) were reduced successfully, and excellent ESD performance was achieved

Published in:

2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.

Date of Conference:

6-10 Oct. 2002