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Browse Conference Publications > 2002 Electrical Overstress/El ... Help

Investigation of ESD protection elements under high current stress in CDM-like time domain using backside laser interferometry

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11 Author(s)
Bychikhin, S. ; Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040, Austria ; Dubec, V. ; Litzenberger, M. ; Pogany, D.
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Switching dynamics and current flow homogeneity under very fast TLP (vf-TLP) stress is investigated in smart power and CMOS technology ESD protection devices by means of optical transient interferometric mapping (TIM) techniques with sub-nanosecond time resolution. Comparison between the device behavior under vf- and conventional TLP stress is discussed. The sub-ns time resolution enables a detailed insight into the triggering behavior of protection elements.

Published in:
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.

Date of Conference: 6-10 Oct. 2002

Page(s):
390 - 398
E-ISBN :
978-1-5853-7040-5
Print ISBN:
978-1-5853-7040-5
Conference Location :
Charlotte, NC, USA
Product Type:
Conference Publications

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