By Topic

Withdrawal of "Fabrication and Properties of  \hbox {Pt}/\hbox {Bi}_{3.15}\hbox {Nd}_{0.85}\hbox {Ti}_{3}\hbox {O}_{12}/\hbox {HfO}_{2}/\hbox {Si} Structure for Ferroelectric DRAM (FEDRAM) FET"

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

This paper [ibid., vol. 30, no. 5, pp. 463??465, May 2009] is withdrawn at the request of the authors. The lead author has made errors in the IEEE member grades of the coauthors and not all the coauthors have prior knowledge of the submission by the lead author.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 10 )