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Radiation characterization of a low power 0.5 μm SOI-CMOS technology

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3 Author(s)
Vu, T.O. ; Semicond. Products Center, Hughes Aircraft Co., Newport Beach, CA, USA ; Nguyen, A.V. ; Cable, J.S.

SOI technologies such as bonded and SIMOX are good candidates to replace SOS in environments requiring radiation hardness up to and above 1 Mrad. We have developed a 0.5 μm SOI-CMOS process that is rad-hard to at least 300Krad(SiO2). The process and device characteristics, along with radiation results, are presented

Published in:

SOI Conference, 1995. Proceedings., 1995 IEEE International

Date of Conference:

3-5 Oct 1995