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Browse Conference Publications > SOI Conference, 1995. Proceed ... Help

Accumulation-type vs. inversion-type: narrow channel effect in VLSI mesa-isolated fully-depleted ultra-thin SOI PMOS devices

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2 Author(s)
Su, K.W. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Kuo, J.B.

The paper reports the sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI inversion-type and accumulation-type PMOS devices. Based on the study, contrary to inversion-type devices, the threshold voltage of mesa-isolated ultra-thin SOI accumulation-type PMOS devices shrinks as the channel width scales down as a result of the buried-channel effect influenced by the sidewall via the buried oxide

Published in:
SOI Conference, 1995. Proceedings., 1995 IEEE International

Date of Conference: 3-5 Oct 1995

Page(s):
38 - 39
Meeting Date :
03 Oct 1995-05 Oct 1995
Print ISBN:
0-7803-2547-8
INSPEC Accession Number:
5218974
Conference Location :
Tucson, AZ
Digital Object Identifier :
10.1109/SOI.1995.526449
Product Type:
Conference Publications

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