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Accumulation-type vs. inversion-type: narrow channel effect in VLSI mesa-isolated fully-depleted ultra-thin SOI PMOS devices

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2 Author(s)
K. W. Su ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; J. B. Kuo

The paper reports the sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI inversion-type and accumulation-type PMOS devices. Based on the study, contrary to inversion-type devices, the threshold voltage of mesa-isolated ultra-thin SOI accumulation-type PMOS devices shrinks as the channel width scales down as a result of the buried-channel effect influenced by the sidewall via the buried oxide

Published in:

SOI Conference, 1995. Proceedings., 1995 IEEE International

Date of Conference:

3-5 Oct 1995