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Low-voltage transient bipolar effect induced by dynamic floating-body charging in PD/SOI MOSFETs

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5 Author(s)
Pelella, M.M. ; Semicond. R&D Center, IBM Corp., Hopewell Junction, NY, USA ; Fossum, J.G. ; Dongwook Suh ; Krishnan, S.
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Partially-depleted (PD) SOI MOSFETs offer improved threshold control and sensitivity over fully depleted devices, but the effects of dynamic floating-body charging on the threshold voltage VT(t) can possibly lead to instabilities in PD/SOI circuits. We show in this paper that the dynamic charging of the body can also induce a parasitic bipolar-transistor (BJT) transient current which can be significant even at low voltages well below the drain-source breakdown defined by the BJT. Our results indicate that if device/circuit design allows substantial variation of the body charge, then the transient BJT current could be large enough to upset the logic or memory (SRAM or DRAM) function of a chip. They further show that such an upset becomes more probable as the device is scaled, and they give insight regarding device and circuit design to reduce the probability

Published in:

SOI Conference, 1995. Proceedings., 1995 IEEE International

Date of Conference:

3-5 Oct 1995

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