Cart (Loading....) | Create Account
Close category search window

Low-voltage transient bipolar effect induced by dynamic floating-body charging in PD/SOI MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Pelella, M.M. ; Semicond. R&D Center, IBM Corp., Hopewell Junction, NY, USA ; Fossum, J.G. ; Dongwook Suh ; Krishnan, S.
more authors

Partially-depleted (PD) SOI MOSFETs offer improved threshold control and sensitivity over fully depleted devices, but the effects of dynamic floating-body charging on the threshold voltage VT(t) can possibly lead to instabilities in PD/SOI circuits. We show in this paper that the dynamic charging of the body can also induce a parasitic bipolar-transistor (BJT) transient current which can be significant even at low voltages well below the drain-source breakdown defined by the BJT. Our results indicate that if device/circuit design allows substantial variation of the body charge, then the transient BJT current could be large enough to upset the logic or memory (SRAM or DRAM) function of a chip. They further show that such an upset becomes more probable as the device is scaled, and they give insight regarding device and circuit design to reduce the probability

Published in:

SOI Conference, 1995. Proceedings., 1995 IEEE International

Date of Conference:

3-5 Oct 1995

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.