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InGaAlAs-InGaAsP Heteromaterial Monolithic Integration for Advanced Long-Wavelength Optoelectronic Devices

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6 Author(s)
Shinoda, K. ; Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan ; Makino, S. ; Kitatani, T. ; Shiota, T.
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High-coupling-efficiency high-reliability hetero-material integration of InGaAlAs-based and InGaAsP-based optical components on a single InP substrate was achieved. A butt-jointing process with in situ cleaning was used to integrate an InGaAlAs-based component and an InGaAsP-based component. Optical-coupling efficiency at the butt-jointed interface of a novel multiple-butt-jointed laser was quantitatively estimated to be more than 97%. An InGaAlAs laser integrated with an InGaAsP-based component and an InGaAsP laser integrated with an InGaAlAs-based component were fabricated by the butt-jointing process. The fabricated 1.3- mum InGaAlAs laser integrated with an InGaAsP distributed Bragg reflector exhibited 100degC, 10-Gbps direct modulation at a low drive current of 14-mA peak-to-peak. Furthermore, the fabricated 1.55-mum InGaAsP distributed feedback laser integrated with an InGaAlAs electroabsorption modulator exhibited the first uncooled 10-Gbps 40-km transmission (with a 1-dB power penalty) from 0 to 85degC. Aging tests on both types of lasers showed no significant degradation in their driving current for more than one thousand hours.

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Quantum Electronics, IEEE Journal of  (Volume:45 ,  Issue: 9 )