By Topic

Suitability of Fe/GaAs and (Co,Ni)Mn(Ga,Ge) for Spintronics Applications: An Ab Initio Study

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Grunebohm, A. ; Dept. of Phys., Univ. of Duisburg-Essen, Duisburg, Germany ; Herper, H.C. ; Gruner, M.E. ; Entel, Peter

In this paper, we use density functional theory to compare the usability of Fe(110)/GaAs(110) and new materials like the magnetic Heusler compound Co2MnGe or Ni2MnGa for spintronics applications. One quantity, which can easily be obtained and which is of major interest, is the degree of spin polarization at the Fermi level for the different systems under consideration. Therefore, we compare the spin polarization at the Fermi level for different configurations. For a Fe-GaAs multilayer system, a spin polarization of 19.6% is achieved at the interface, which increases towards the bulk polarization of Fe within a few monolayers. But, if only 1/4 monolayer of Fe is covering the GaAs surface, a strong ionic relaxation modifies the density of states, and thus, destroys the spin polarization. The Co2 MnGe/MgO multilayer system shows an even larger polarization of 60.7% at the interface. Although a martensitic transformation shifts the pseudogap towards the Fermi level for the Ni2 MnGa system, Co states close this gap.

Published in:

Magnetics, IEEE Transactions on  (Volume:45 ,  Issue: 10 )