Skip to Main Content
To address the challenge of specific programming in the design of magnetic content addressable memory cell, we propose a cell design with synthetic anti-ferromagnetic (SAF) trilayers for both comparand and local stored information. With only one grid of word and bit lines, one of the two SAF trilayers can be programmed with direct mode switching and the other with toggle mode switching. Unlike the cell designs proposed previously, this design features simpler implementation because only one set of programming wires and supporting circuits is necessary. The feasibility of this design comes from the intrinsic difference between switching threshold field for the two switching modes. The programming field difference can be engineered by adjusting the thickness of SAF trilayers. Simulation work demonstrates the feasibility and shows this design can tolerate the thickness variation in fabrication process.