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Epitaxial Growth and Magnetic Properties of Half-Metallic Fe _{3} O _{4} on Si(100) Using MgO Buffer Layer

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4 Author(s)
Hassan, S.S.A. ; Depts. of Electron., Univ. of York, York, UK ; Yongbing Xu ; Jing Wu ; Thompson, S.M.

The growth and magnetic properties of epitaxial magnetite Fe3O 4 on Si(100) using MgO buffer layer have been studied by reflection high-energy electron diffraction, X-ray photoelectron spectroscopy, and magneto-optical Kerr effect. The epitaxial Fe 3O 4 films were prepared by in situ post growth annealing of ultrathin epitaxial Fe films at 220degC in an oxygen partial pressure of 8 times 10-4 mbar. The epitaxial relationship was found to be Fe3 O4 (100)lang001rang//MgO(100)lang001rang//Si(100)lang001rang with the MgO film grown cube-on-cube orientation with the Si substrate. While the Fe unit cell rotates 45deg to match that of the MgO buffer layer, it rotates 45deg back upon oxidation. A low saturation field has been observed indicating low density of antiphase boundaries.

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Magnetics, IEEE Transactions on  (Volume:45 ,  Issue: 10 )