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Anomalous Behavior in Electrical Transport Properties in Single-Crystal Gd _{5} Si _{1.8} Ge _{2.2} and Polycrystalline Gd _{5} Si _{2.09} Ge _{1.91}

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4 Author(s)
Hadimani, R.L. ; Wolfson Centre for Magnetics, Cardiff Univ., Cardiff, UK ; Melikhov, Y. ; Snyder, J.E. ; Jiles, D.C.

Gd5(SixGe1-x)4 exhibits anomalous behavior in resistivity measurement close to its first-order phase transition temperature. In this paper, we present a series of resistivity as a function of temperature measurements indicating an irreversible change in the resistivity. The resistivity of the sample increased every time the sample was passed through first-order phase transition for both single-crystal Gd5Si1.8Ge2.2(x=0.45) and polycrystalline Gd5 Si2.09 Ge1.91(x=0.522). Magnetic hysteresis loops were also plotted for the single-crystal Gd5 Si1.8 Ge2.2 at 220 K. The hysteresis loops were measured several times at 220 K, cycling the temperature between 220 and 300 K between each measurement. The coercivity of the sample increased irreversibly when the sample was passed through the first-order phase transition. The increase in the coercivity was 20 Oe for the fourth and fifth thermal cycles and then it remained constant up to 15 thermal cycles.

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Magnetics, IEEE Transactions on  (Volume:45 ,  Issue: 10 )