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Multiferroic Properties of Hexagonal YbMnO _{3} Thin Films

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2 Author(s)
Han, T.C. ; Dept. of Appl. Phys., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan ; Lin, J.G.

The hexagonal (HX) YbMnO3 thin films were synthesized on the substrates of (111)Y2O3:ZrO2 and (111)Pt/(0001)Al2O3 by pulsed laser deposition (PLD), and their structural, magnetic, and electrical properties are measured. The temperature-dependent magnetization clearly displays an antiferromagnetic ordering near 80 K with field perpendicular to the film surface. In the curve of polarization-voltage, the HX-YbMnO3 thin films show distinct ferroelectricity with the room-temperature remanent polarization and coercive field being 1.1 muC/cm2 and 58 kV/cm, respectively. These results indicate that the HX-YbMnO3 thin films are prominent candidates for the applications of multiferroic devices.

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Magnetics, IEEE Transactions on  (Volume:45 ,  Issue: 10 )