By Topic

Tunneling Magnetoresistance Simulation Used to Detect Domain-Wall Structures and Their Motion in a Ferromagnetic Wire

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Sawada, K. ; Div. of Electron. for Inf., Hokkaido Univ., Sapporo, Japan ; Uemura, Tetsuya ; Masuda, M. ; Matsuda, Ken-ichi
more authors

Devices consisting of single or double magnetic tunnel junctions (MTJs) with cross-magnetization configurations were proposed to enable simultaneous electrical detection of both the structure and motion of a domain wall (DW), and the operation of these devices was confirmed through micromagnetic simulation. Through the tunnel magnetoresistance (TMR) effect of the MTJs, two types of domain-wall structure formed in a ferromagnetic wire were clearly identified: a transverse wall (TW) in which the magnetization at the center of the wall is directed transverse to the wire axis, and a vortex wall (VW) in which the magnetization circulates in the plane about a small perpendicular vortex core. In addition to the structural difference between TW and VW, the velocity of the DW motion was detected through the time response of the TMR.

Published in:

Magnetics, IEEE Transactions on  (Volume:45 ,  Issue: 10 )