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100 GHz+ Gain-Bandwidth Differential Amplifiers in a Wafer Scale Heterogeneously Integrated Technology Using 250 nm InP DHBTs and 130 nm CMOS

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9 Author(s)
Li, J.C. ; Microelectron. Lab., HRL Labs. LLC, Malibu, CA, USA ; Elliott, K.R. ; Matthews, D.S. ; Hitko, D.A.
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Differential amplifiers incorporating the advantages of both Si and III-V technologies have been fabricated in a wafer scale, heterogeneously integrated, process using both 250 nm InP DHBTs and 130 nm CMOS. These ICs demonstrated gain-bandwidth product of 40-130 GHz and low frequency gain > 45 dB . The use of InP DHBTs supports a > 6.9 V differential output swing and a slew rate > 4 times 104V/mus to be achieved with as low as 40 mW dissipated power. A novel on-chip buffer circuit is used to facilitate the on-wafer characterization of these amplifiers. To the authors' knowledge, this is the first demonstration of a high performance IC building block in a heterogeneously integrated process technology.

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Solid-State Circuits, IEEE Journal of  (Volume:44 ,  Issue: 10 )