By Topic

Silicon-Based Microring Resonator Modulators for Intensity Modulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Lin Zhang ; Department of Electrical Engineering , University of Southern California, CA, USA ; Yunchu Li ; Jeng-Yuan Yang ; Muping Song
more authors

We numerically analyze the characteristics of silicon-based microring modulators consisting of a single-ring resonator. Performance of the devices as digital intensity modulators is examined in terms of extinction ratio, pulsewidth, frequency chirp, spectral broadening, and signal quality. Three types of the modulators built in single-waveguide under-/overcoupling and dual-waveguide configurations are discussed. We show that cavity dynamics significantly affect the modulation properties. Data transmission performance over single-mode fibers is also presented. A silicon microring modulator with negative chirp could achieve 0.8 dB power penalty in 80-km fiber transmission without dispersion compensation.

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:16 ,  Issue: 1 )