Skip to Main Content
A generalised form of a concurrent dual-band matching network has been proposed for a packaged CMOS low noise amplifier (LNA). To eliminate the detrimental effects of component non-idealities on matching performance, a modified set of design equations has been developed. The robustness of the proposed network has been demonstrated at the GSM900 and DCS1800 bands. Incorporating this network, an LNA designed in a 0.18 mum CMOS process provides S 11 of -33 and -30-dB, gain of 16.54 and 11.03-dB and noise figure of 1.35 and 2.37-dB, respectively, at 900-MHz and 1.7-GHz. The LNA draws a current of 2-mA from 1.8-V supply.