Referenced Items are not available for this document.
A new ESD protection circuit, by using the stacked-NMOS triggered silicon controlled rectifier (SNTSCR) as the ESD clamp device, is designed to protect the mixed-voltage I/O buffers of CMOS IC's. Without using the thick gate oxide, the experimental results in a 0.35-mum CMOS process have proven that the human-body-model ESD level of the mixed-voltage I/O buffer can be successfully increased from the original ~2 kV to become > 8 kV by using this new proposed ESD protection circuit.
Published in:
Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
Date of Conference: 11-13 Sept. 2001
- Page(s):
- 32 - 43
- E-ISBN :
- 978-1-5853-7039-9
- Print ISBN:
- 978-1-5853-7039-9
- INSPEC Accession Number:
- 10915197
- Conference Location :
- Portland, OR
- Product Type:
- Conference Publications
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