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Experimental analysis and electro-thermal simulation of low- and high-voltage ESD protection bipolar devices in a Silicon-On-Insulator Bipolar-CMOS-DMOS technology

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6 Author(s)
Depetro, R. ; Dedicated Products Group, ST-Microelectron., Milan, Italy ; Mignoli, F. ; Andreini, A. ; Contiero, C.
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We present the results of extensive characterization of fully isolated SOI NPN bipolar protection devices by means of both 2D simulations, DC and TLP measurements, and HBM/TLP ESD stress tests. Excellent agreement between measured and simulated quasistatic and pulsed I-V characteristics of the protection structures has been obtained. We also confirm the usefulness of 2D/3D device simulations for ESD optimization.

Published in:

Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.

Date of Conference:

11-13 Sept. 2001