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Numerical simulation of SiC GTO thyristor using finite element analysis

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2 Author(s)
Norainon Mohamed ; Faculty of Electrical and Electronics Engineering, Universiti Malaysia Pahang, Lebuhraya Tun Razak, 26300 Kuantan, Malaysia ; Muhamad Zahim Sujod

A change of technology from Si to SiC will revolutionize the power electronics. In this paper, the switching simulation, 4H-SiC GTO thyristor is presented and tested numerically by predicting its performance using the 2-D simulator developed in this project. We calculate turn-off time and loss of SiC GTO thyristor using 2-dimensional device simulation.

Published in:

2009 International Conference on Electrical Engineering and Informatics  (Volume:01 )

Date of Conference:

5-7 Aug. 2009