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Analysis of controlled mixed-phase (amorphous+microcrystalline) silicon thin films by real time spectroscopic ellipsometry

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5 Author(s)
Podraza, N.J. ; Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 ; Jing Li ; Wronski, C.R. ; Dickey, E.C.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3212893 

Engineered thin films consisting of periodic arrays of silicon microcrystallites in a hydrogenated amorphous silicon host matrix have been prepared by plasma-enhanced chemical vapor deposition where the hydrogen dilution of silane is modulated in multiple cycles. These types of films have been guided by a phase evolution diagram, depicting the deposition conditions and film thickness at which the material exhibits amorphous, microcrystalline, or mixed-phase (amorphous+microcrystalline) characteristics, developed for intrinsic Si:H prepared with varying H2 dilution on unhydrogenated a-Si:H. Real time spectroscopic ellipsometry (RTSE) has been used in situ to noninvasively determine the phase evolution of the resulting hydrogenated mixed-phase (amorphous+microcrystalline) silicon thin films and corroborated with dark-field transmission electron microscopy. Such tailored microstructures are of growing interest as components of thin film photovoltaic devices, and RTSE is shown to be a key technique for structure verification.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:27 ,  Issue: 6 )

Date of Publication:

Nov 2009

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