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Characterization and improvements of flash EEPROM endurance performance by integrating optimized process modules in advanced flash technology

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8 Author(s)
Shone, F. ; Macronix Int. Co., Hsinchu, Taiwan ; Chang, A. ; Chen, T. ; Wu, S.
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The effects of process modules of tunnel oxide, barrier metal, and passivation films on the endurance performance of flash EEPROM devices have been extensively characterized. It is found that dilute wet O2 +N2O anneal for tunnel oxide, Ti/TiN as barrier metals, and SOG as interlayer passivation can greatly improve endurance performance and greatly reduce Gm degradation

Published in:

VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on

Date of Conference:

31 May-2 Jun 1995